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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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BC558 Datenblatt(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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BC558 Datenblatt(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 3 page  Any changing of specification will not be informed individual BC556, B, C 1 2 TO-92 1. COLLECTOR 2. BASE . EMITTER 1 2 3 3 3 Elektronische Bauelemente BC557, A, B, C BC558, A, B, C FEATURES Power dissipation PCM: 0.625 W (Tamb=25 ℃) Collector current ICM: - 0.1 A Collector-base voltage VCBO: BC5 56 -80 V BC5 57 -50 V BC5 58 -30 V Operating and storage junction temperature range TJ, Tstg: -55 ℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25 ℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage BC5 56 BC5 57 BC5 58 VCBO Ic= -100µA , IE=0 -80 -50 -30 V Collector-emitter breakdown voltage BC5 56 BC5 57 BC5 58 VCEO = - 2mA, IB=0 -65 -45 -30 V Emitter-base breakdown voltage VEBO IE= -100µA, IC=0 -6 V Collector cut-off current BC5 56 BC5 57 BC5 58 ICBO VCB= -70V, IE=0 VCB= -45 V, IE=0 VCB= -25V, IE=0 -0.1 µA Collector cut-off current BC5 56 BC5 57 BC5 58 ICEO VCE= -60 V, IB=0 VCE= -40 V, IB=0 VCE= -25 V, IB=0 -0.1 µA Emitter cut-off current BC5 56 BC5 57 BC5 58 IEBO VEB= -5V, IC=0 -0.1 µA DC current gain BC5 56 BC5 57 BC5 58 BC5 57A/558A BC5 56B/BC557B/BC558B BC5 56C/BC557C/BC558C hFE(1) VCE=-5V, IC= -2mA 1 20 1 20 1 20 1 20 180 420 500 800 800 220 4 60 800 Collector-emitter saturation voltage VCE(sat) I C=-100 mA, IB= -5mA -0.3 V Base-emitter saturation voltage VBE(sat) I C= -100 mA, IB=-5mA -1 V Transition frequency f T VCE= -5V, IC= -10mA f = 100MHz 150 MHz PNP Transistor 01-Jun-2002 Rev. A Page 1 of 3 RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free |
Ähnliche Teilenummer - BC558 |
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Ähnliche Beschreibung - BC558 |
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