Datenblatt-Suchmaschine für elektronische Bauteile
  German  ▼
ALLDATASHEETDE.COM

X  

Preview PDF HTML

SSG4407 Datenblatt(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

Teilenummer SSG4407
Bauteilbeschribung  P-Channel Enhancement Mode Power Mos.FET
PDF  4 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Hersteller  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SSG4407 Datenblatt(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

  SSG4407 Datasheet HTML 1Page - SeCoS Halbleitertechnologie GmbH SSG4407 Datasheet HTML 2Page - SeCoS Halbleitertechnologie GmbH SSG4407 Datasheet HTML 3Page - SeCoS Halbleitertechnologie GmbH SSG4407 Datasheet HTML 4Page - SeCoS Halbleitertechnologie GmbH  
Zoom Inzoom in Zoom Outzoom out
 2 / 4 page
background image
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of 4
Notes: 1.
2.Pulse width 300us, dutycycle 2%.
≦
≦
3.Surface mounted on 1 in copper pad of FR4 board;125 C/W when mounted on min. copper pad.
2
o
Max.
Typ.
Test Condition
Unit
nC
nS
31
25
10.7
=-10.7
=-
A, VGS=0V.
_
IS
V
-1.2
_
_
IS
A, VGS=0V.
dl/dt=100A/us
Parameter
Symbol
Min.
Forward On Voltage
Reverse Recovery Time
Trr
_
Reverse Recovery Change
_
Qrr
VSD
_
2
370
f=1.0MHz
13
S
VDS=-10V, ID=-10A
_
_
_
_
29
6
14
15
12
100
70
2600
500
nC
nS
pF
VGS=0V
VDS=-25V
VDD=-15V
ID=-1A
VGS=-10V
RG=3.3
RD=15
Ω
Ω
ID=-10.7A
VDS=-24V
VGS=-4.5V
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
14
20
mΩ
VGS=-10V, ID=-10A
VGS=-4.5V, ID=-5A
_
_
46
4100
_
_
Crss
Gfs
Reverse Transfer Capacitance
Forward Transconductance
Qg
Qgs
Qgd
Td(ON)
Td(Off)
Tr
Ciss
Coss
Tf
RDS(ON)
30
0.015
1.0
-3.0
100
-1
-25
±
V
V/
Reference to 25C, ID=-1mA
o
oC
V
nA
uA
uA
VGS=0V, ID=-250uA
VGS= 25V
±
VDS=-30V,VGS=0
VDS=-24V,VGS=0
VDS=VGS, ID=-250uA
_
_
_
_
_
_
_
_
_
_
_
-
-
-
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
BVDSS
BVDS/ Tj
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25 )
Static Drain-Source On-Resistance
Drain-Source Leakage Current(Tj= 70 )
VGS(th)
IGSS
oC
oC
2
2
2
Source-Drain Diode
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
Unit
Electrical Characteristics( Tj=25 C Unless otherwise specified)
o
Pulse width limited by Max. junction temperature.
Elektronische Bauelemente
SS
G4407
-10.7A, -30V,RDS(ON) 14m
P-Channel Enhancement Mode Power Mos.FET
Ω



Html Pages

1 2 3 4


Datenblatt Download

Go To PDF Page


Link URL



War ALLDATASHEET hilfreich?  [ DONATE ] 

Über Alldatasheet   |   Werbung   |   Kontakt   |   Privatsphäre und Datenschutz   |   Link zum Datenblatt    |   Linktausch   |   Hersteller
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com