| Datenblatt-Suchmaschine für elektronische Bauteile |
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SSG9962 Datenblatt(PDF) 4 Page - SeCoS Halbleitertechnologie GmbH |
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SSG9962 Datenblatt(HTML) 4 Page - SeCoS Halbleitertechnologie GmbH |
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4 / 4 page ![]() http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 4 tage does not sag below the minimum dropout voltage during the load V higher than Vout in order for the device to Description GND Typically a large storage capacitor is connected from this pin to ground to insure that the input 1.3V or open= output enable. NC Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Circuit Fig 12. Gate Charge Circuit Elektronische Bauelemente SSG9962 7A, 40V,RDS(ON) 25m N-Channel Enhancement Mode Power Mos.FET Ω |
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