01-Jun-2002 Rev. A

Page

4 of 4

Elektronische Bauelemente

SSM2310

N-Channel Enhancement Mode Power Mos.FET

Ω

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

Fig 11. Switching Time Waveform

Fig 12. Gate Charge Waveform

120 :::: /W