MBR3045

Chips for Schottky Diodes

Chip Specification

General Description:

Schottky Diode chips with Mo-barrier for switch mode power

rectifiers with the following features:

* Guard-ring for stress protection

* Extremely low forward voltage

* 125 ℃

℃

℃

℃ operation junction temperature

* reverse avalanche behavior

Mechanical Data:

MBR3045 passivated Silicon Chip

Demension(mil)

150x150

Thickness:

350 +- 20

µm

Metallization:

Top ( Anode ) :

Al Ag

Bottom ( Cathode) : TiNiAg

Forward Current(A)

30A

Reverse Voltage (V):

>45V

Type

Chip

VF(V)@25 C

VF(V)@125 C

size(mil)

at If=30A

at If=30A

at 25 C

MBR3045

150x150

0,54V

0,47V

0,6mA

* expected value for recommended assembling with both side soldering

Tipical devise MBR3045

Note: Other voltages & Top Metal AL are available