2SA1012 datasheet(1/1 Pages) JMNIC

Teilenummer	2SA1012

Bauteilbeschribung	Silicon PNP Transistors

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Hersteller	JMNIC [Quanzhou Jinmei Electronic Co.,Ltd.]

Direct Link	http://www.jmnic.com

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Power Transistors

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2SA1012

Silicon PNP Transistors

Features

B C E

﹒With TO-220 package

﹒Complementary to 2SC2562

Absolute Maximum Ratings Tc=25

SYMBOL

PARAMETER

RATING

UNIT

VCBO

Collector to base voltage

-60

V

VCEO

Collector to emitter voltage

-50

V

VEBO

Emitter to base voltage

-5

V

IB

Base current

A

IC

Collector current

-5

A

PC

Collector power dissipation

25

W

Tj

Junction temperature

150

Tstg

Storage temperature

-55~150

TO-220

Electrical Characteristics Tc=25

SYMBOL

PARAMETER

CONDITIONS

MIN

Typ

MAX

UNIT

ICBO

Collector-base cut-off current

VCB=-50V; IE=0

-1

uA

IEBO

Emitter-base cut-off current

VEB=-5V; IC=0

-1

uA

ICEO

Collector-emitter cut-off current

VCBO

Collector-base breakdown voltage

V(BR)ceo

Collector-emitter breakdown voltage

IC=-10mA;IB=0

-50

V

VEBO

Emitter-base breakdown voltage

VCE(sat-1)

Collector-emitter saturation voltages

IC=-8A; IB=-0.15A

-0.2

-0.4

V

VCE(sat-2)

Collector-emitter saturation voltages

hFE-1

Forward current transfer ratio

IC=-1A; VCE=-1V

70

240

hFE-2

Forward current transfer ratio

IC=-3A; VCE=-1V

30

VBE(sat)1

Base-emitter saturation voltages

IC=-8A; IB=-0.15A

-0.9

-1.2

V

VBE(sat)2

Base-emitter saturation voltages

COB

Collector Output Capacitance

VCB=-10V; IE=0;f=1MHz

70

pF

fT

Transition frepuency

IC=-1A; VCE=-4V

60

MHz

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