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TMS418160ADZ Datenblatt(PDF) 21 Page - Texas Instruments |
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TMS418160ADZ Datenblatt(HTML) 21 Page - Texas Instruments |
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21 / 24 page ![]() TMS418160A 1048576 BY 16-BIT DYNAMIC RANDOM-ACCESS MEMORY SMKS891C – AUGUST 1996 – REVISED OCTOBER 1997 21 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443 PARAMETER MEASUREMENT INFORMATION RAS xCAS Address W DQ0 – DQ15 OE Row Col Don’t Care Valid Data Don’t Care Don’t Care Refresh Cycle Memory Cycle Refresh Cycle tRAS tRP tRAS tRP tCHR tCAS tCAH tASC tRAH tASR tWCS tWP tWRP tWRH tDH tDS tWCH Figure 13. Hidden-Refresh-Cycle ( Write) Timing |
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