LPC2919SLASH01 datasheet(71/86 Pages) NXP

71 / 86 page

LPC2917_19_01_2

Preliminary data sheet

Rev. 02 — 17 June 2009

71 of 86

NXP Semiconductors

LPC2917/01; LPC2919/01

ARM9 microcontroller with CAN and LIN

9.4 Dynamic characteristics: ﬂash memory and EEPROM

[1]

Number of program/erase cycles.

Table 38.

Flash characteristics

Tamb = -40 °Cto+85 °C; VDD(CORE) =VDD(OSC_PLL); VDD(IO) = 2.7 V to 3.6 V;

VDDA(ADC3V3) = 3.0 V to 3.6 V; all voltages are measured with respect to ground.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Nendu

endurance

[1] 10000

cycles

tret

retention time

powered

years

unpowered

years

tprog

programming time

word

0.95

1.05

ter

erase time

global

100

105

sector

100

105

tinit

initialization time

150

µs

twr(pg)

page write time

0.95

1.05

tﬂ(BIST)

ﬂash word BIST time

ta(clk)

clock access time

63.4

ta(A)

address access time

60.3

Table 39.

EEPROM characteristics

Tamb = -40 °Cto+85 °C; VDD(CORE) =VDD(OSC_PLL); VDD(IO) = 2.7 V to 3.6 V;

VDDA(ADC3V3) = 3.0 V to 3.6 V; all voltages are measured with respect to ground.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

fclk

clock frequency

200

375

400

kHz

Nendu

endurance

100000

500000

cycles

tret

retention time

powered

years

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