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2SK4101FS Datenblatt(PDF) 2 Page - Sanyo Semicon Device |
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2SK4101FS Datenblatt(HTML) 2 Page - Sanyo Semicon Device |
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2 / 5 page ![]() 2SK4101FS No. A1366-2/5 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain-to-Source Breakdown Voltage V(BR)DSS ID=10mA, VGS=0V 650 V Zero-Gate Voltage Drain Current IDSS VDS=520V, VGS=0V 100 μA Gate-to-Source Leakage Current IGSS VGS=±30V, VDS=0V ±100 nA Cutoff Voltage VGS(off) VDS=10V, ID=1mA 3 5 V Forward Transfer Admittance | yfs | VDS=10V, ID=3.5A 2.3 4.6 S Static Drain-to-Source On-State Resistance RDS(on) ID=3.5A, VGS=10V 0.85 1.1 Ω Input Capacitance Ciss VDS=30V, f=1MHz 750 pF Output Capacitance Coss VDS=30V, f=1MHz 136 pF Reverse Transfer Capacitance Crss VDS=30V, f=1MHz 28 pF Turn-ON Delay Time td(on) See specified Test Circuit. 21 ns Rise Time tr See specified Test Circuit. 40 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 89 ns Fall Time tf See specified Test Circuit. 31 ns Total Gate Charge Qg VDS=200V, VGS=10V, ID=7A 28.5 nC Gate-to-Source Charge Qgs VDS=200V, VGS=10V, ID=7A 5.2 nC Gate-to-Drain “Miller” Charge Qgd VDS=200V, VGS=10V, ID=7A 16 nC Diode Forward Voltage VSD IS=7A, VGS=0V 0.9 1.2 V Package Dimensions unit : mm (typ) 7528-001 Switching Time Test Circuit Avalanche Resistance Test Circuit P.G RGS=50Ω G S ID=3.5A RL=57Ω VDD=200V VOUT 2SK4101FS D PW=10μs D.C.≤0.5% VIN 10V 0V VIN 50Ω ≥50Ω RG VDD L 10V 0V 2SK4101FS 1 : Gate 2 : Drain 3 : Source SANYO : TO-220F-3FS 10.16 0.8 1.47 MAX 4.7 2.54 2.76 12 3 0.5 2.54 2.54 3.18 |
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