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T15V256A-85PI Datenblatt(PDF) 3 Page - Taiwan Memory Technology

Teilenummer T15V256A-85PI
Bauteilbeschribung  32K X 8 LOW POWER CMOS STATIC RAM?
PDF  11 Pages
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Hersteller  TMT [Taiwan Memory Technology]
Direct Link  http://www.tmtech.com.tw
Logo TMT - Taiwan Memory Technology

T15V256A-85PI Datenblatt(HTML) 3 Page - Taiwan Memory Technology

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TE
CH
tm
T15V256A
Taiwan Memory Technology, Inc. reserves the right
P. 3
Publication Date: SEP. 2001
to change products or specifications without notice.
Revision:A
DC CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS
PARAMETER
RATING
UNIT
Supply Voltage to Vss Potential
-0.5 to + 4.6
V
Inputs
to Vss Potential
-0.5 to Vcc +0.5
V
Power Dissipation
0.7
W
Storage Temperature
-60 to +150
°C
RECOMMENDED OPERATING CONDITIONS
PARAMETER
SYM
MIN
TYP
MAX
UNIT
Supply Voltage
Vcc
2.7
-
3.6
V
Input Voltage, low
V
IL
-0.3
-
0.6
V
Input Voltage, high
V
IH
2.4
-
Vcc+0.3
V
Ambient Temperature
T
A
0/-40
-
+75/+85
°C
TRUTH TABLE
CS
OE
WE
MODE
I/O1- I/O8
Power
H
X
X
Not Selected
High-Z
Standby
L
H
H
Output Disable
High-Z
Active
L
L
H
Read
Data Out
Active
L
X
L
Write
Data In
Active
OPERATING CHARACTERISTICS
(Vcc = 2.7V to 3.6V, Vss = 0V, Ta = 0 ~ +70
°C /-40 to 85
°C)
PARAMETER
SYM.
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Input Leakage Current
I
LI
Vin=Vss to Vcc
-
-
1
µA
Output Leakage Current
I
LO
VI/O=Vss to Vcc , CS =VIH or
OE
=
V
IH
or WE =
VIL
-
-
1
µA
Output Low Voltage
V
OL
I
OL= + 2.1mA
-
-
0.4
V
Output High Voltage
V
OH
I
OH = - 1.0mA
2.2
-
-
V
-50
-
-
35
mA
-70
-
-
30
mA
-85
-
-
25
mA
Operating Power
Supply Current
Icc
CS =V
IL, I/O=0mA
Cycle = MIN.
Duty = 100%
-100
-
-
20
mA
I
SB
CS=V
IH, Cycle=min, Duty=100%
-
-
0.3
mA
Standby Power
Supply Current
I
SB1
CS
≥ Vcc-0.2V
-
-
5
uA



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