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APT66F60L Datenblatt(PDF) 1 Page - Microsemi Corporation

Teilenummer APT66F60L
Bauteilbeschribung  N-Channel FREDFET
PDF  4 Pages
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Hersteller  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APT66F60L Datenblatt(HTML) 1 Page - Microsemi Corporation

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T-Max
TM
TO-264
N-Channel FREDFET
Absolute Maximum Ratings
Thermal and Mechanical Characteristics
G
D
S
Single die FREDFET
Unit
A
V
mJ
A
Unit
W
°C/W
°C
oz
g
in·lbf
N·m
Ratings
70
44
245
±30
1845
33
Min
Typ
Max
1135
0.11
0.11
-55
150
300
0.22
6.2
10
1.1
Parameter
Continuous Drain Current @ T
C
= 25°C
Continuous Drain Current @ T
C
= 100°C
Pulsed Drain Current 1
Gate-Source Voltage
Single Pulse Avalanche Energy 2
Avalanche Current, Repetitive or Non-Repetitive
Characteristic
Total Power Dissipation @ T
C
= 25°C
Junction to Case Thermal Resistance
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
Soldering Temperature for 10 Seconds (1.6mm from case)
Package Weight
Mounting Torque ( TO-264 Package), 4-40 or M3 screw
Symbol
I
D
I
DM
V
GS
E
AS
I
AR
Symbol
P
D
RθJC
RθCS
T
J
,T
STG
T
L
W
T
Torque
TYPICAL APPLICATIONS
• ZVS phase shifted and other full bridge
• Half bridge
• PFC and other boost converter
• Buck converter
• Single and two switch forward
• Flyback
FEATURES
• Fast switching with low EMI
• Low trr for high reliability
• Ultra low Crss for improved noise immunity
• Low gate charge
• Avalanche energy rated
• RoHS compliant
APT66F60B2
APT66F60L
600V, 70A, 0.09
Ω Max, trr ≤ 310ns
APT66F60B2
APT66F60L
Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET.
A proprietary planar stripe design yields excellent reliability and manufacturability. Low
switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-
tance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
help control slew rates during switching, resulting in low EMI and reliable paralleling,
even when switching at very high frequency. Reliability in flyback, boost, forward, and
other circuits is enhanced by the high avalanche energy capability.
MicrosemiWebsite-http://www.microsemi.com


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