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APTGF50TL60T3G Datenblatt(PDF) 1 Page - Microsemi Corporation

Teilenummer APTGF50TL60T3G
Bauteilbeschribung  Three level inverter NPT IGBT Power Module
PDF  8 Pages
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Hersteller  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTGF50TL60T3G Datenblatt(HTML) 1 Page - Microsemi Corporation

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APTGF50TL60T3G
www.microsemi.com
1- 8
Q1 to Q4 Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
600
V
TC = 25°C
65
IC
Continuous Collector Current
TC = 80°C
50
ICM
Pulsed Collector Current
TC = 25°C
230
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC = 25°C
250
W
RBSOA Reverse Bias Safe Operating Area
Tj = 125°C
100A @ 500V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
16
15
18
20
23 22
13
11 12
14
8
7
29
30
28 27 26
3
32
31
10
19
2
25
4
All multiple inputs and outputs must be shorted together
Example: 10/11/12 ; 7/8 …
VCES = 600V
IC = 50A @ Tc = 80°C
Application
Solar converter
Uninterruptible Power Supplies
Features
Non Punch Through (NPT) Fast IGBT
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 100 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Internal thermistor for temperature monitoring
Benefits
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
RoHS Compliant
Three level inverter
NPT IGBT Power Module


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