SPT1175

ELECTRICAL SPECIFICATIONS

TEST

TEST

SPT1175

PARAMETERS

CONDITIONS

LEVEL

MIN

TYP

MAX

UNITS

Resolution

8

Bits

DC Accuracy (+25

°C)

Integral Nonlinearity

I

±0.8

±1.2

LSB

Differential Nonlinearity

I

±0.6

±1.0

LSB

No Missing Codes

I

Guaranteed

Analog Input

Input Voltage Range

I

V

Input Bias Current

I

±5.0

µA

Input Resistance

VI

100

200

k

Ω

Input Capacitance

V

15

pF

Input Bandwidth

V

12

MHz

Reference Input

Reference Ladder Resistance

I

200

300

400

Ω

Reference Current

I

5.0

6.7

10.0

mA

Reference Input Voltage

IV

0

0.6

-

V

IV

-

2.6

2.8

V

Internal Bias

I

0.55

0.60

0.65

V

I

1.9

2.0

2.1

V

Offset Voltage Error

Top

I

-18

-25

-68

mV

Bottom

I

0

10

40

mV

Timing Characteristics

Maximum Conversion Rate

1 MHz Input Sine Wave

I

20

30

MSPS

Output Data Delay (td)

IV

18

30

ns

Output Data Delay

(High Z)

IV

100

ns

(Tdish, Tdisl)

Data Valid Time

Tri-State Circuit

IV

100

ns

(Teneh, Tenel)

Sampling Time Offset

IV

5

10

ns

Supply Voltages

Input Voltages

±1,500 V

Temperature

Operating Temperature ................................. 0 to +70

°C

Junction Temperature ........................................... 175

°C

Lead Temperature, (soldering 10 seconds) .......... 300

°C

Storage Temperature ................................ -55 to +125

°C

Notes: 1.

Operation at any Absolute Maximum Rating is not implied. See Electrical Specifications for proper nominal

applied conditions in typical applications.

2.

100 pF discharged through a 1.5 k

Ω resistor (human body model).

2

6/24/97