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OSA Opto Light GmbH — Tel. +49-(0)30-65 76 26 83 — Fax +49-(0)30-65 76 26 81 — contact@osa-opto.com

RED

Item No.: 114230

1.

This specification applies to GaAlAs / GaAs LED Chips

2.

Structure

2.1

Mesa structure

2.2

Electrodes

p-side (anode)

Au alloy

n-side (cathode)

Au alloy

3.

Outlines (dimensions in microns)

Wire bond contacts can also be circular or square

4.

Electrical and optical characteristics (T=25°C)

Parameter

Symbol

Conditions

min

typ

max

Unit

Forward voltage

1,85

2,10

V

Reverse current

10

µA

9

12

Luminous intensity *

4

6

mcd

Peak wavelength

λ

P

650

nm

Brightness measurement at OSA on gold plate

5.

Packing

Dice on adhesive film with 1) wire bond side on top

2) back contact on top

6.

Labeling

Type

Lot No.

Quantity

min

max

p-Electrode

270

Active Layer

n-Substrate GaAs

n-Epitaxy GaAlAs

n-Electrode

265

265

120

p-Epitaxy GaAlAs