BUT34

2

Motorola Bipolar Power Transistor Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (Table 1)

(IC = 100 mA, IB = 0)

VCEO(sus)

500

—

—

Vdc

Collector Cutoff Current

(VCEV = Rated Value, VBE(off) = 1.5 Vdc)

(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100_C)

ICEV

—

—

—

—

0.2

4.0

mAdc

Emitter Cutoff Current

(VEB = 2.0 V, IC = 0)

IEBO

—

—

350

mAdc

SECOND BREAKDOWN

Second Breakdown Collector Current with base forward biased

IS/b

See Figure 16

Clamped Inductive SOA with Base Reverse Biased

RBSOA

See Figure 17

ON CHARACTERISTICS (1)

DC Current Gain

(IC = 16 A, VCE = 5 V)

(IC = 32 A, VCE = 5 V)

hFE

30

15

—

—

—

—

Collector–Emitter Saturation Voltage

(IC = 16 A, IB = 0.8 A)

(IC = 32 A, IB = 3.2 A)

(IC = 40 A, IB = 4 A)

(IC = 50 A, IB = 10 A)

VCE(sat)

—

—

—

—

—

—

—

—

2.0

3.0

3.5

5.0

Vdc

Base–Emitter Saturation Voltage

(IC = 16 A, IB = 0.8 A)

(IC = 32 A, IB = 3.2 A)

(IC = 40 A, IB = 4 A)

VBE(sat)

—

—

—

—

—

—

2.5

2.9

3.3

Vdc

Diode Forward Voltage

(IF = 40 A)

Vf

—

—

4.0

Vdc

SWITCHING CHARACTERISTICS

Inductive Load, Clamped (Table 1)

Storage Time

TC = 25_C

See Table 1

ts

—

1.8

3.0

µs

Fall Time

IC = 32 A

tf

—

0.7

1.5

µs

Storage Time

TC = 100_C

IB1 = 3.2 A

ts

—

2.2

—

µs

Fall Time

VBE(off) = 5 V

tf

—

0.8

—

µs

(1) Pulse Test: PW = 300

µs, Duty Cycle x 2%.