M24L416256DA datasheet(4/15 Pages) ESMT

4 / 15 page

ESMT

M24L416256DA

Elite Semiconductor Memory Technology Inc.

Publication Date: Jul. 2008

Revision: 1.5

4/15

Maximum Ratings

(Above which the useful life may be impaired. For user

guide-lines, not tested.)

Storage Temperature .................................–65°C to +150°C

Ambient Temperature with

Power Applied ..............................................–55°C to +125°C

Supply Voltage to Ground Potential ................−0.4V to 4.6V

DC Voltage Applied to Outputs

in High-Z State[6, 7, 8] .......................................−0.4V to 3.7V

DC Input Voltage[6, 7, 8] ....................................−0.4V to 3.7V

Output Current into Outputs (LOW) ............................20 mA

Static Discharge Voltage ......................................... > 2001V

(per MIL-STD-883, Method 3015)

Latch-up Current ....................................................> 200 mA

Operating Range

Range

Ambient Temperature (TA)

VCC

Extended

−25°C to +85°C

2.7V to 3.6V

Industrial

−40°C to +85°C

2.7V to 3.6V

DC Electrical Characteristics (Over the Operating Range)

-55, 60, 70

Parameter

Description

Test Conditions

Min.

Typ.[2]

Max.

Unit

VCC

Supply Voltage

2.7

3.0

3.6

VOH

Output HIGH

Voltage

IOH = −0.1 mA

VCC – 0.4

VOL

Output LOW

Voltage

IOL = 0.1 mA

0.4

VIH

Input HIGH

Voltage

0.8 * VCC

VCC + 0.4

VIL

Input LOW

Voltage

F = 0

-0.4

0.62

IIX

Input Leakage

Current

GND

≤ VIN ≤ Vcc

-1

µA

IOZ

Output Leakage

Current

GND

≤ VOUT ≤ Vcc, Output

Disabled

-1

µA

f = fMAX = 1/tRC

14 for –55

14 for –60

08 for –70

22 for –55

22 for –60

15 for –70

ICC

VCC Operating

Supply Current

f = 1 MHz

VCC = 3.6V,

IOUT = 0 mA,

CMOS level

1 for all speeds

5 for all speeds

ISB1

Automatic

Power-down

Current —CMOS

Inputs

≥ VCC − 0.2V, CE2 ≤

0.2V, VIN ≥ VCC − 0.2V, VIN ≤

0.2V, f = fMAX(Address and Data

Only),f = 0 ( OE , WE , BHE and

BLE

)

150

250

µA

ISB2

Automatic

Power-down

Current —CMOS

Inputs

≥ VCC − 0.2V, CE2 ≤

0.2V, VIN ≥ VCC − 0.2V or VIN

≤ 0.2V, f = 0, VCC = 3.6V

µA

Capacitance[9]

Parameter

Description

Test Conditions

Max.

Unit

CIN

Input Capacitance

COUT

Output Capacitance

TA = 25°C, f = 1 MHz

VCC = VCC(typ)

Thermal Resistance[9]

Parameter

Description

Test Conditions

VFBGA

Unit

θJA

Thermal Resistance (Junction to Ambient)

C/W

θJC

Thermal Resistance (Junction to Case)

Test conditions follow standard test

methods and procedures for measuring

thermal impedance, per EIA/JESD51.

C/W

Notes:

6.VIH(MAX) = VCC + 0.5V for pulse durations less than 20 ns.

7.VIL(MIN) = –0.5V for pulse durations less than 20 ns.

8.Overshoot and undershoot specifications are characterized and are not 100% tested.

9.Tested initially and after design or process changes that may affect these parameters.

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