P r o d u c t I n n o v a t i o n F r o m

PA83 • PA83A

2

PA83U

SPECIFICATIONS

ABSOLUTE MAXIMUM RATINGS

SUPPLY VOLTAGE, +V

300V

OUTPUT CURRENT, within SOA

Internally Limited

POWER DISSIPATION, internal at T

1

17.5W

INPUT VOLTAGE, differential

±300V

INPUT VOLTAGE, common mode

±300V

TEMPERATURE, pin solder - 10s max (solder)

300°C

TEMPERATURE, junction

175°C

TEMPERATURE RANGE, storage

–65 to +150°C

OPERATING TEMPERATURE RANGE, case

–55 to +125°C

PA83

PA83A

PARAMETER

MIN

TYP

MAX

MIN

TYP

MAX

UNITS

INPUT

OFFSET VOLTAGE, initial

T

±1.5

±3

±.5

±1

mV

OFFSET VOLTAGE, vs. temperature

Full temperature range

±10

±25

±5

±10

µV/°C

OFFSET VOLTAGE, vs. supply

T

±.5

±.2

µV/V

OFFSET VOLTAGE, vs. time

T

±75

*

µV/√kh

T

5

50

3

10

pA

BIAS CURRENT, vs. supply

T

.01

*

pA/V

T

±2.5

±50

±1.5

±10

pA

OFFSET CURRENT, vs. supply

T

±.01

*

pA/V

INPUT IMPEDANCE, DC

T

*

Ω

INPUT CAPACITANCE

Full temperature range

6

*

pF

Full temperature range

±V

*

V

COMMON MODE REJECTION, DC

Full temperature range

130

*

dB

GAIN

OPEN LOOP GAIN at 10Hz

T

96

116

*

*

dB

UNITY GAIN CROSSOVER FREQ.

T

5

3

*

MHz

POWER BANDWIDTH

T

60

40

*

kHz

PHASE MARGIN

Full temperature range

60

*

°

OUTPUT

Full temp. range, I

±V

±V

*

*

V

Full temp. range, I

±V

±V

*

*

V

CURRENT, peak

T

75

*

mA

CURRENT, short circuit

T

100

*

mA

T

20

30

*

*

V/µs

CAPACITIVE LOAD, unity gain

Full temperature range

10

*

nF

CAPACITIVE LOAD, gain > 4

Full temperature range

SOA

*

µF

SETTLING TIME to .1%

T

12

*

µs

POWER SUPPLY

VOLTAGE

T

±15

±150

±150

*

*

*

V

CURRENT, quiescent

T

6

8.5

*

*

mA

THERMAL

F > 60Hz

4.26

*

°C/W

RESISTANCE, DC, junction to case

F < 60Hz

6.22

8.57

*

*

°C/W

RESISTANCE, case to air

30

*

°C/W

TEMP. RANGE, case (PA83/PA83A)

Meets full range specification

–25

+85

*

*

°C

NOTES: *

The specification of PA83A is identical to the specification for PA83 in applicable column to the left.

1. Long term operation at the maximum junction temperature will result in reduced product life. Derate internal power dissipation to

achieve high MTTF.

2. The power supply voltage for all tests is the TYP rating, unless otherwise noted as a test condition.

3. Doubles for every 10°C of temperature increase.

4. +V

5. Rating applies if the output current alternates between both output transistors at a rate faster than 60Hz.

6. Signal slew rates at pins 5 and 6 must be limited to less than 1V/ns to avoid damage. When faster waveforms are unavoidable,

resistors in series with those pins, limiting current to 150mA will protect the amplifier from damage.

The internal substrate contains beryllia (BeO). Do not break the seal. If accidentally broken, do not crush, machine, or

subject to temperatures in excess of 850°C to avoid generating toxic fumes.

CAUTION