P r o d u c t I n n o v a t i o n F r o m

PB58 • PB58A

2

PB58U

SUPPLY VOLTAGE, +V

300V

OUTPUT CURRENT, within SOA

2.0A

POWER DISSIPATION, internal at T

1

83W

INPUT VOLTAGE, referred to COM

±15V

TEMPERATURE, pin solder—10 sec max

300°C

175°C

TEMPERATURE, storage

–65 to +150°C

OPERATING TEMPERATURE RANGE, case

–55 to +125°C

SPECIFICATIONS

ABSOLUTEMAXIMUMRATINGS

PB58

PB58A

PARAMETER

MIN

TYP

MAX

MIN

TYP

MAX

UNITS

INPUT

OFFSET VOLTAGE, initial

±.75

±1.75

*

±1.0

V

OFFSET VOLTAGE, vs. temperature

–4.5

–7

*

*

mV/°C

INPUT IMPEDANCE, DC

25

50

*

*

kΩ

INPUT CAPACITANCE

3

*

pF

CLOSED LOOP GAIN RANGE

3

10

25

*

*

*

V/V

GAIN ACCURACY, internal Rg, Rf

A

±10

±15

*

*

%

GAIN ACCURACY, external Rf

A

±15

±25

*

*

%

PHASE SHIFT

f = 10kHz, AV

10

*

°

f = 200kHz, AV

60

*

°

OUTPUT

VOLTAGE SWING

Io = 1.5A (PB58), 2A (PB58A)

V

V

V

V

V

VOLTAGE SWING

Io = 1A

V

V

*

*

V

VOLTAGE SWING

Io = .1A

V

V

*

*

V

CURRENT, continuous

1.5

2.0

A

SLEW RATE

Full temperature range

50

100

75

*

V/µs

CAPACITIVE LOAD

Full temperature range

2200

*

pF

SETTLING TIME to .1%

R

2

*

µs

POWER BANDWIDTH

V

160

320

240

*

kHz

SMALL SIGNAL BANDWIDTH

C

100

*

kHz

SMALL SIGNAL BANDWIDTH

C

1

*

MHz

POWER SUPPLY

VOLTAGE, ±V

S

4

Full temperature range

±60

±150

*

*

*

V

CURRENT, quiescent

V

11

*

mA

V

12

*

mA

V

14

18

*

*

mA

THERMAL

Full temp. range, f > 60Hz

1.2

1.3

*

*

°C/W

RESISTANCE, DC junction to case

Full temp. range, f < 60Hz

1.6

1.8

*

*

°C/W

RESISTANCE, junction to air

Full temperature range

30

*

°C/W

TEMPERATURE RANGE, case

Meets full range specifications

–25

25

85

*

*

*

°C

NOTES: *

The specification of PB58A is identical to the specification for PB58 in applicable column to the left.

1. Long term operation at the maximum junction temperature will result in reduced product life. Derate internal power dissipation to

achieve high MTTF (Mean Time to Failure).

2. The power supply voltage specified under typical (TYP) applies, T

3. Guaranteed by design but not tested.

4. +V

5. Rating applies if the output current alternates between both output transistors at a rate faster than 60Hz.

6. +V

The PB58 is constructed from MOSFET transistors. ESD handling procedures must be observed.

The internal substrate contains beryllia (BeO). Do not break the seal. If accidentally broken, do not crush, machine, or

subject to temperatures in excess of 850°C to avoid generating toxic fumes.

CAUTION