2 of 4
Rev A1 DS090612
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FPD1500
Pad Layout
Note: Coordinates are referenced from the bottom left hand
corner of the die to the center of the bond pad opening.
Absolute Maximum Ratings1
Parameter
Rating
Unit
Drain-Source Voltage (VDS)
(-3V<VGS<-0.5V)2
10
V
Gate-Source Voltage (VGS)
(0V<VDS<+8V)
-3
V
Drain-Source Current (IDS)
(For VDS<2V)
IDSS
Gate Current
(Forward or reverse current)
15
mA
RF Input Power (PIN)
(Under any acceptable bias state)
25
dBm
Channel Operating Temperature (TCH)
(Under any acceptable bias state)
175
°C
Storage Temperature (TSTG)
(Non-Operating Storage)
-65 to 150
°C
Total Power Dissipation (PTOT)3, 4, 5
3.6
W
Simultaneous Combination of Limits6
(2 or more max. limits)
80
%
Notes:
1TAMBIENT=22°C unless otherwise noted; exceeding any one of these absolute max-
imum ratings may cause permanent damage to the device.
2Operating at absolute maximum VD continuously is not recommended. If operation
at 10V is considered then IDS must be reduced in order to keep the part within
its thermal power dissipation limits. Therefore VGS is restricted to <-0.5V.
3Total Power Dissipation to be de-rated as follows above 22°C: PTOT=3.6-
(0.024W/°C)xTHS, where THS=heatsink or ambient temperature above 22°C.
Example: For a 85°C carrier temperature: PTOT=3.6-(0.024x(85-22))=2.09W
4Total Power Dissipation (PTOT) defined as (PDC+PIN)–POUT, where PDC: DC Bias
Power, PIN: RF Input Power, POUT: RF Output Power.
5Users should avoid exceeding 80% of 2 or more Limits simultaneously.
6Thermal Resistivity specification assumes a Au/Sn eutectic die attach onto an Au-
plated copper heatsink or rib.
Pad
Description
Pin Coordinates (
μm)
A1
Gate Pad
130, 330
A2
Gate Pad
130, 190
B1
Drain Pad
390, 330
B2
Drain Pad
390, 190
CSource Pad
Die Size (
μm)
Die Thickness (
μm)
Min. Bond Pad Opening (
μmxμm)
470x530
75
64x77
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
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