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TC551001 Datenblatt(PDF) 7 Page - Toshiba Semiconductor

Teilenummer TC551001
Bauteilbeschribung  SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM
PDF  13 Pages
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Hersteller  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TC551001 Datenblatt(HTML) 7 Page - Toshiba Semiconductor

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SR01020795
Static RAM
TC551001BPL/BFL/BFTL/BTRL-70L/85L
TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC
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7
Notes:
1. R/W is High for Read Cycle.
2. Assuming that CE1 Low transition or CE2 High transition occurs coincident with or after the R/W low transition, Out-
puts remain in a high impedance state.
3. Assuming that CE1 High transition or CE2 Low transition occurs coincident with or prior to the R/W high transition,
Outputs remain in a high impedance state.
4. Assuming that OE is High for a Write Cycle, Outputs are in a high impedance state during this period.
5. The I/O may be in the output state during this time, input signals of opposite phase must not be applied.



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