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BC140/10 Datenblatt(PDF) 2 Page - Comset Semiconductor

Teilenummer BC140/10
Bauteilbeschribung  GENERAL PURPOSE TRANSISTORS
PDF  3 Pages
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Hersteller  COMSET [Comset Semiconductor]
Direct Link  http://comset.halfin.com
Logo COMSET - Comset Semiconductor

BC140/10 Datenblatt(HTML) 2 Page - Comset Semiconductor

  BC140/10 Datasheet HTML 1Page - Comset Semiconductor BC140/10 Datasheet HTML 2Page - Comset Semiconductor BC140/10 Datasheet HTML 3Page - Comset Semiconductor  
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NPN BC140/10 – BC140/16
NPN BC141/10 – BC141/16
COMSET SEMICONDUCTORS
2/3
Symbol
Ratings
Test Condition(s)
Min
Typ Mx
Unit
BC140
IE= 0 ;VCES= 60 V
BC141
-
-
100
nA
BC140
ICES
Collector – Cutoff Current
IE= 0 ; VCES= 60 V
Tamb = 150°c
BC141
-
-
100
µA
BC140
80
-
-
VCB0
Collector – Base Breakdown
Voltage
IC = 100 µA
IE= 0
BC141
100
-
-
V
BC140
40
-
-
VCE0 (*)
Collector – Emitter
Breakdown Voltage
IC = 30 mA
IB= 0
BC141
60
-
-
V
BC140
VEB0
Emitter – Base Breakdown
Voltage
IE= 100 µA
IC= 0
BC141
7
-
-
V
IC= 100 mA , IB= 10 mA
-
0.1
IC= 500 mA , IB= 50 mA
-
0.35
VCE(SAT) (*)
Collector-Emitter saturation
Voltage
IC= 1 A, IB= 100 mA
-
0.6
1
VBE (*)
Base-Emitter Voltage
IC= 1 A , VCE= 1V
1.25
1.8
V
-
75
-
Gr 10
-
40
-
IC= 100 µA , VCE= 1 V
Gr 16
-
90
-
40
140
250
Gr 10
63
100
160
IC= 100 mA , VCE= 1 V
Gr 16
100
160
250
-
26
-
Gr 10
-
20
-
hFE (*)
DC Current Gain
IC= 1 A , VCE= 1 V
Gr 16
-
30
-
-
fT
Transition Frequency
IC= 50 mA , VCE= 10 V
50
-
-
MHZ
CCBO
Collector – base
Capacitance
IE= 0 ;VCB= 10V
f = 1 MHZ
-
12
25
pF
toff
Turn-off times
IC=100 mA
IB1=-IB2=5 mA
-
-
850
ns
ton
Turn-on times
IC=100 mA
IB1=1 mA
-
-
250
ns
(*) Pulsed : pulse duration = 300µs, duty cycle = 1%



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