ACE3413

Technology

P-Channel Enhancement Mode MOSFET

VER 1.2

1

Description

The ACE3413 is the P-Channel logic enhancement mode power field effect transistors are produced

using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as cellular phone and notebook

computer power management and Battery powered circuits, and low in-line power loss are needed in a

very small outline surface mount package.

Features

DS(ON)

Application

Absolute Maximum Ratings

(TA=25℃ Unless otherwise noted)

Parameter

Symbol Typical Unit

Drain-Source Voltage

-20

V

Gate-Source Voltage

±

12

V

-3.5

-2.8

A

Pulsed Drain Current

-15

A

Continuous Source Current (Diode Conduction)

-1.4

A

1.25

Power Dissipation

0.8

W

Operating Junction Temperature

-55/150 ℃

Storage Temperature Range

Thermal Resistance-Junction to Ambient

150

℃

/W