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CHA2097A99F/00 Datenblatt(PDF) 2 Page - United Monolithic Semiconductors

Teilenummer CHA2097A99F/00
Bauteilbeschribung  20-40GHz Variable Gain Amplifier
PDF  8 Pages
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Hersteller  UMS [United Monolithic Semiconductors]
Direct Link  http://www.ums-gaas.com
Logo UMS - United Monolithic Semiconductors

CHA2097A99F/00 Datenblatt(HTML) 2 Page - United Monolithic Semiconductors

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CHA2097a
20-40GHz Variable Gain Amplifier
Ref. : DSCHA20978021
2/8
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Electrical Characteristics for Broadband Operation
Tamb = +25°C, Vd1,2,3 = 3.5V
Symbol
Parameter
Min
Typ
Max
Unit
Fop
Operating frequency range (1)
20
40
GHz
G
Small signal gain (1)
16
18
dB
∆G
Small signal gain flatness (1)
±1.5
dB
Is
Reverse isolation (1)
40
dB
P1dB
Output power at 1dB gain compression (1)
13
14
dBm
P03
Output power at 3dB gain compression
15
16
dBm
VSWRin
Input VSWR (1)
3.0:1
VSWRout
Output VSWR (1)
3.0:1
Gctrl
Gain control dynamic
12
dB
Vdc
DC voltage
Vd
Vg
Vctrl
-2.0
-2.0
3.5
4.0
0.4
0.4
V
V
V
Id
Bias current
140
200
mA
(1) These values are representative of on-wafer measurements that are made without bonding
wires at the RF ports.
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage
4.0
V
Id
Drain bias current
200
mA
Vg
Gate bias voltage
-2.0 to +0.4
V
Ta
Operating temperature range
-40 to +85
°C
Tstg
Storage temperature range
-55 to +155
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.



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