PSII6SLASH12 datasheet(1/2 Pages) POWERSEM

Teilenummer	PSII6/12

Bauteilbeschribung	IGBT Module

PDF	2 Pages

Scroll/Zoom	100%

Hersteller	POWERSEM [Powersem GmbH]

Direct Link	http://www.powersem.com

Logo

1 / 2 page

IGBT Module

I

C25

= 6 A

V

CES

= 1200 V

V

CE(sat)typ. = 3.9 V

Features

•

NPT IGBT’s

- positive temperature coefficient of

saturation voltage

- fast switching

•

FRED diodes

- fast reverse recovery

- low forward voltage

•

Industry Standard Package

- solderable pins for PCB mounting

- isolated DCB ceramic base plat

e

•

UL registered, E 148688

Applications

•

AC drives

•

power supplies with power factor

correction

Advantages

•

Easy to mount with two screws

•

Space and weight savings

•

Improved temperature and power

cycling capability

•

High power density

•

Small and light weight

POWERSEM GmbH, Walpersdorfer Str. 53

D - 91126 Schwabach

Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20

ECO-PAC

TM 2

 2002 POWERSEM reserves the right to change limits, test conditions and dimensions

Preliminary Data Sheet

*NTC optional

Caution: These devices are sensitive

to electrostatic discharge. Users should

observe proper ESD handling precautions.

PSII 6/12*

S9

X18

N9

L9

W14

R5

N5

H5

D5

A5

K12

K13

G1

F3

K10

A1

C1

PSII 6/12*

IGBT

Symbol

Conditions

Maximum Ratings

V

CES

T

VJ = 25°C to 150°C

1200

V

GES

± 20

V

I

C25

T

C = 25°C

6

A

I

C80

T

C = 80°C

4.1

A

I

CM

V

GE = 15/0 V; RG = 89 Ω; TVJ = 125°C

9.6

A

V

CEK

RBSOA, Clamped inductive load; L = 100 µH

V

CES

t

SC

V

CE = VCES; VGE = 15/0 V; RG = 89 Ω; TVJ = 125°C

10

µs

(SCSOA)

non-repetitive

P

tot

T

C = 25°C

40

W

Symbol

Conditions

Characteristic Values

(T

VJ = 25°C, unless otherwise specified)

min.

typ.

max.

V

CE(sat)

I

C = 4 A; VGE = 15 V; TVJ =

25°C

3.9

4.6

V

T

VJ = 125°C

4.6

V

GE(th)

I

C = 0.1 mA; VGE = VCE

35

V

I

CES

V

CE = VCES;VGE = 0 V; TVJ =

25°C

0.1 mA

V

CE = 960 V;

V

GE = 0 V; TVJ = 125°C

0.5

mA

I

GES

V

CE = 0 V; VGE =

± 20 V

100

nA

t

d(on)

30

ns

t

r

20

ns

t

d(off)

290

ns

t

f

90

ns

E

on

0.4

mJ

E

off

0.2

mJ

C

ies

V

CE = 25 V; VGE = 0 V; f = 1 MHz

205

pF

Q

Gon

V

CE = 960 V; VGE = 15 V; IC = 2 A

11

nC

R

thJC

(per IGBT)

3.1 K/W

R

thJH

(per IGBT) with heatsink compound

6.2

K/W

Inductive load, T

VJ = 125°C

V

CE = 600 V; IC = 4 A

V

GE = 15/0 V; RG = 89 Ω

Ähnliche Beschreibung - PSII6/12

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
eupec GmbH	FS10R06VL4B2	634Kb / 7P	IGBT-Module IGBT-modules
	FS10R12VT3	653Kb / 8P	IGBT-Module IGBT-modules
	FS10R12YT3	706Kb / 7P	IGBT-Module IGBT-modules
	FZ400R12KS4	287Kb / 8P	IGBT-Module / IGBT-inverter
Fuji Electric	2MBI200U2A-060	748Kb / 13P	IGBT module
eupec GmbH	FZ600R65KF1	179Kb / 10P	IGBT-Module
eupec GmbH	FS100R12KT3	308Kb / 8P	IGBT-Module
Fairchild Semiconductor	SM2G50US60	455Kb / 10P	IGBT MODULE
Semikron International	SK9GD063	131Kb / 2P	IGBT Module
Semikron International	SK30GB067	320Kb / 2P	IGBT Module

More results

PSII6/12 Datenblatt(PDF) 1 Page - Powersem GmbH

PSII6/12 Datenblatt(HTML) 1 Page - Powersem GmbH

Ähnliche Teilenummer - PSII6/12

Ähnliche Beschreibung - PSII6/12

Html Pages

1 2

Datenblatt Download

Link URL