H2274 datasheet(1/1 Pages) HUASHAN

Teilenummer	H2274

Bauteilbeschribung	NPN SILICON TRANSISTOR

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Hersteller	HUASHAN [SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD]

Direct Link	http://www.huashan.com.cn

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Shantou Huashan Electronic Devices Co.,Ltd.

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APPLICATIONS

Low frequency power amplifier Applications.

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ABSOLUTE MAXIMUM RATINGS（Ta=25℃）

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ELECTRICAL CHARACTERISTICS（Ta=25℃）

Symbol

Characteristics

Min

Typ

Max

Unit

Test Conditions

BVCBO

Collector-Base Breakdown Voltage

60

V

IC=10μA, IE=0

BVCEO

Collector-Emitter Breakdown Voltage

50

V

IC=1mA, IB=0

BVEBO

Emitter-Base Breakdown Voltage

5

V

IE=10μA，IC=0

ICBO

Collector Cut-off Current

1.0

μA

VCB=40V, IE=0

IEBO

Emitter Cut-off Current

1.0

μA

VEB=4V, IC=0

HFE(1)

DC Current Gain

60

320

VCE=5V, IC=50mA

HFE(2)

35

VCE=5V, IC=400mA

VCE(sat)

Collector- Emitter Saturation Voltage

0.2

0.6

V

IC=400mA, IB=40mA

VBE(sat)

Base-Emitter Saturation Voltage

0.9

1.2

V

IC=400mA, IB=40mA

fT

Current Gain-Bandwidth Product

120

MHz

VCE=10V, IC=10mA

Cob

Output Capacitance

5

pF

VCB=10V, f=1MHz

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hFE Classification

D

E

F

60—120

120—200

160—320

Tstg——Storage Temperature………………………… -55~150℃

Tj——Junction Temperature…………………………………150℃

PC——Collector Dissipation…………………………………600mW

VCBO——Collector-Base Voltage………………………………60V

VCEO——Collector-Emitter Voltage……………………………50V

VEBO——Emitter-Base Voltage………………………………5V

IC——Collector Current………………………………………500mA

ICP——Collector Current（Pulse）………………………………800mA

1―Emitter，E

2―Collector，C

3―Base，B

TO-92

H2274

NPN SILICON TRANSISTOR

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