HTP4A60S datasheet(2/4 Pages) HUASHAN

Teilenummer	HTP4A60S

Bauteilbeschribung	NON INSULATED TYPE SENSITIVE GATE TRIAC (TO-220 PACKAGE)

PDF	4 Pages

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Hersteller	HUASHAN [SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD]

Direct Link	http://www.huashan.com.cn

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2 / 4 page

Shantou Huashan Electronic Devices Co.,Ltd.

█ Electrical Characteristics（T

a=25℃）

Symbol

Items

Min.

Typ.

Max.

Unit

Conditions

IDRM

Repetitive Peak Off-State Current

1.0

VD=VDRM, Single Phase,

Half Wave,

TJ=125℃

VTM

Peak On-State Voltage

1.6

IT=6A, Inst. Measurement

I+GT1

Gate Trigger Current（Ⅰ）

5.0

VD=6V, RL=10 ohm

I-GT1

Gate Trigger Current（Ⅱ）

5.0

VD=6V, RL=10 ohm

I-GT3

Gate Trigger Current（Ⅲ）

5.0

VD=6V, RL=10 ohm

I+GT3

Gate Trigger Current（Ⅳ）

10.0

VD=6V, RL=10 ohm

V+GT1

Gate Trigger Voltage（Ⅰ）

1.4

VD=6V, RL=10 ohm

V-GT1

Gate Trigger Voltage（Ⅱ）

1.4

VD=6V, RL=10 ohm

V-GT3

Gate Trigger Voltage（Ⅲ）

1.4

VD=6V, RL=10 ohm

V+GT3

Gate Trigger Voltage（Ⅳ）

1.8

VD=6V, RL=10 ohm

VGD

Non-Trigger Gate Voltage

0.2

TJ=125℃,VD=1/2VDRM

(dv/dt)c

Critical Rate of Rise of Off-State

Voltage at Commutation

V/µS

TJ=125℃,VD=2/3VDRM

(di/dt)c= -0.5A/ms

Holding Current

Rth(j-c)

Thermal Resistance

℃/W Junction to case

HTP4A60S

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