GC9901 – GC9944

Microsemi

Microwave Products

75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748

Page 1

Schottky Barrier Diodes

For Mixers and Detectors

TM

®

Copyright

 2006

Rev: 2009-01-19

RoHS Compliant

IMPORTANT:

For the most current data, consult our web site:

HU

www.microsemi.com

U

Specifications are subject to change. Consult factory for latest information.

These devices are ESD sensitive and must be handled use using ESD precautions.

DESCRIPTION

Schottky Barrier devices are currently available in single beamlead, dual “T”,

ring quad and bridge quad configurations. Devices are available in monolithic

form for hybrid applications as well as in hermetic or non-hermetic packages.

Monolithic devices are recommended for highest frequency, broadband

designs. The beamlead design eliminates the problems associated with wire

bonding very small junction devices thus improving reliability and

performance in MIC applications. Our in house epitaxy process capability

insures repeatability for lowest conversion loss through Ku Band. A broad

range of unique metallization schemes produce Microsemi’s complete line of

barrier heights. Diodes are currently available with barrier heights as low as

240 mV and up to 625 mV per junction. By optimizing epitaxy and

exceptional conversion loss performance. “High Rel” screening is available on

packaged devices per your requirements.

This series of devices meets RoHS requirements per EU Directive

2002/95/EC.

APPLICATIONS/BENEFITS



Mixers



Level Detectors



Phase Detectors

APPLICATIONS

Schottky barrier diodes are suitable for a variety of circuit applications ranging

from single ended RF mixers to low level high speed switching. The

monolithic beamlead design minimizes parasitic inductance and capacitance

insuring repeatable performance through Ku band. Single junction devices

such as the style ‘S12’ are well suited for RF Mixers, level detectors, phase

detectors, modulators, etc. With junction capacitances as low as .06 pF,

Monolithic Quads are ideally suited for broadband double balanced mixer

designs through 26.5 GHz. The Ultra-Low Barrier devices (GC9900 Series)

are designed for mixers with low or starved Local Oscillator levels where

optimal conversion loss is a must. High barrier diodes, (GC9940 Series) are

designed for applications where high drive levels are available, such as,

Doppler mixers or motion detection. Schottky diodes are available in Ultra-

Low, Medium and High Drive levels to fit virtually any circuit requirement.

ABSOLUTE MAXIMUM RATINGS AT 25º C

3B

(UNLESS OTHERWISE SPECIFIED)

Rating

Symbol

Value

Unit

Maximum Power Handling

P

100

mW

Storage Temperature

-65 to +175

ºC

Operating Temperature

-55 to +150

ºC

KEY FEATURES



Monolithic design for lowest

parasitics



Low Conversion Loss



Suitable for applications to 26.5

GHz



Excellent Noise Figure



Available in low, medium and high

barrier heights



Can be supplied as monolithic

devices for hybrid applications or

as packaged devices



RoHS Compliant

1

plated terminations. Consult factory for

details.