BCW68G datasheet(1/2 Pages) RECTRON

Teilenummer	BCW68G

Bauteilbeschribung	SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP)

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Hersteller	RECTRON [Rectron Semiconductor]

Direct Link	http://www.rectron.com

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RECTRON

SEMICONDUCTOR

FEATURES

MECHANICAL DATA

* Case: Molded plastic

* Epoxy: UL 94V-O rate flame retardant

* Lead: MIL-STD-202E method 208C guaranteed

* Mounting position: Any

* Weight: 0.008 gram

SOT-23

BCW68G

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25

OC ambient temperature unless otherwise specified.

Single phase , half wave, 60HZ, resistive or inductive load.

For capacitive load, derate current by 20%.

0.118(3.00)

0.012(0.30)

0.020(0.50)

0.003(0.08)

0.006(0.15)

0.110(2.80)

0.019(2.00)

0.071(1.80)

0.100(2.55)

0.089(2.25)

0.020(0.50)

0.012(0.30)

0.043(1.10)

0.035(0.90)

0.004(0.10)

0.000(0.00)

TECHNICAL SPECIFICATION

SOT-23 BIPOLAR TRANSISTORS

TRANSISTOR(PNP)

2006-3

ELECTRICAL CHARACTERISTICS ( @ TA = 25OC unless otherwise noted )

CHARACTERISTICS

SYMBOL

UNITS

V

Marking

DG

0.055(1.40)

0.047(1.20)

BASE

EMITTER

COLLECTOR

1

2

3

2

3

DC current gain (VCE= -10V, IC= -0.1mA)

DC current gain (VCE= -1V, IC= -10mA)

DC current gain (VCE= -1V, IC= -100mA)

DC current gain (VCE= -2V, IC= -500mA)

Collector cut-off current (VCB= -45V, IE=0)

Collector cut-off current (VEB= -4V, IC=0)

Transition frequency (VCE= -10V, IC= -20mA, f=100MHZ)

Output capacitance (VCB= -10V, IE= 0, f=1MHZ)

Input capacitance (VEB= -0.5V, IE= 0, f=1MHZ)

Collector-emitter saturation voltage (IC= -100mA, IB= -10mA)

Collector-emitter saturation voltage (IC= -500mA, IB= -50mA)

Base-emitter saturation voltage (IC= -100mA, IB= -10mA)

Base-emitter saturation voltage (IC= -500mA, IB= -50mA)

Noise figure (VCE= -5V, IE= -0.2mA, f=1kHz, Df=200Hz, RG=1KW)

-

-0.3

-0.7

-

MHz

-2

-

18

m

A

m

A

V

PF

V

dB

Collector-base breakdown voltage (IC= -10mA, IE=0)

Collector-emitter breakdown voltage (IC= -10mA, IB=0)

Emitter-base breakdown voltage (IE= -10mA, IC=0)

V(BR)CBO

V(BR)CEO

V(BR)EBO

IEBO

hFE

ICBO

VCE(sat)

VBE(sat)

fT

Cib

Cob

NF

MAX

60

-

10

-

-0.02

-

-0.02

-

400

-

100

MIN

-

-1.25

80

-

TYP

-

-60

-45

-5

-

120

50

-

160

* Power dissipation

PCM :

0.33

W (Tamb=25OC)

* Collector current

ICM :

-0.8

A

* Collector-base voltage

V(BR)CBO : -60

V

* Operating and storage junction temperature range

TJ,Tstg: -55OC to +150OC

Note 1: "Fully ROHS compliant", "100% Sn plating (Pb-free)".

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