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HFP730 Datenblatt(PDF) 3 Page - SemiHow Co.,Ltd. |
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HFP730 Datenblatt(HTML) 3 Page - SemiHow Co.,Ltd. |
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3 / 8 page ![]() ◎ SEMIHOW REV.A0,June 2005 Figure 1. On Region Characteristics Figure 2. Transfer Characteristics Figure 3. On Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics Typical Characteristics 10 -1 10 0 10 1 0 100 200 300 400 500 600 700 800 900 C iss = Cgs + Cgd (Cds = shorted) C oss = Cds + Cgd C rss = Cgd ※ Note ; 1. V GS = 0 V 2. f = 1 MHz C rss C oss C iss V DS, Drain-Source Voltage [V] 0 2 4 6 8 10 12 14 16 18 20 22 24 0 2 4 6 8 10 12 V DS = 200V V DS = 80V V DS = 320V ※ Note : I D = 5.5A Q G, Total Gate Charge [nC] |
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