HFD1N65 datasheet(3/8 Pages) SEMIHOW

Teilenummer	HFD1N65

Bauteilbeschribung	650V N-Channel MOSFET

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◎ SEMIHOW REV.A0,Apr 2006

-1

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iss = Cgs + Cgd (Cds = shorted)

oss = Cds + Cgd

rss = Cgd

※ Note ;

1. V

GS = 0 V

2. f = 1 MHz

rss

oss

iss

DS, Drain-Source Voltage [V]

Typical Characteristics

0.0

0.5

1.0

1.5

2.0

2.5

3.0

※ Note : T

J = 25

℃

GS = 20V

GS = 10V

D , Drain Current [A]

DS = 325V

DS = 130V

DS = 520V

※ Notes : I

D = 0.8 A

G, Total Gate Charge [nC]

Figure 1. On Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

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