SSM75T10GS datasheet(4/5 Pages) SSC

Teilenummer	SSM75T10GS

Bauteilbeschribung	N-channel Enhancement-mode Power MOSFET

PDF	5 Pages

Scroll/Zoom	100%

Hersteller	SSC [Silicon Standard Corp.]

Direct Link	http://www.siliconstandard.com

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SSM75T10GP,S

2/16/2005 Rev.1.1

Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

Fig 9. Maximum Safe Operating Area

Fig 10. Effective Transient Thermal Impedance

Fig 11. Switching Time Waveform

Fig 12. Gate Charge Waveform

100

120

140

Q G , Total Gate Charge (nC)

V DS =50 V

V DS =64 V

V DS =80 V

I D =30 A

td(on) tr

td(off) tf

VDS

VGS

10%

90%

4.5V

QGS

QGD

Charge

100

1000

10000

131721

2529

V DS ,Drain-to-Source Voltage (V)

f=1.0MHz

C iss

C oss

C rss

0.01

0.1

0.00001

0.0001

0.001

0.01

0.1

t , Pulse Width (s)

PDM

Duty factor = t/T

Peak Tj = PDM x Rthjc + TC

0.02

0.01

0.05

0.1

0.2

Duty factor=0.5

Single Pulse

100

1000

0.1

100

1000

V DS , Drain-to-Source Voltage (V)

T c =25

o C

Single Pulse

100us

1ms

10ms

100ms

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