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SSM9926O Datenblatt(PDF) 2 Page - Silicon Standard Corp.

Teilenummer SSM9926O
Bauteilbeschribung  N-CHANNEL ENHANCEMENT MODE POWER MOSFET
PDF  6 Pages
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Hersteller  SSC [Silicon Standard Corp.]
Direct Link  http://www.siliconstandard.com
Logo SSC - Silicon Standard Corp.

SSM9926O Datenblatt(HTML) 2 Page - Silicon Standard Corp.

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SSM9926O
03/11/2007 Rev.1.00
www.SiliconStandard.com
2
ELECTRICAL CHARACTERISTICS@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
20
-
-
V
ΔBV
DSS/ΔTj
Breakdown Voltage Temperature Coefficient
Reference to 25℃, ID=1mA
-
0.1
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=4.5V, ID=4A
-
23
28
mΩ
VGS=2.5V, ID=2A
-
-
40
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
0.5
-
-
V
gfs
Forward Transconductance
VDS=10V, ID=4.6A
-
9.7
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=20V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=70
oC)
VDS=20V ,VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS=-
-
nA
Qg
Total Gate Charge
2
ID=4.6A
-
12.5
-
nC
Qgs
Gate-Source Charge
VDS=20V
-
1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=5V
-
6.5
-
nC
td(on)
Turn-on Delay Time
2
VDS=10V
-
7
-
ns
tr
Rise Time
ID=1A
-
14.5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=5V
-
19
-
ns
tf
Fall Time
RD=10Ω
-12
-
ns
Ciss
Input Capacitance
VGS=0V
-
355
-
pF
Coss
Output Capacitance
VDS=20V
-
190
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
85
-
pF
SOURCE-DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
IS
Continuous Source Current ( Body Diode )
VD=VG=0V,VS=1.2V
-
-
0.83
A
VSD
Forward On Voltage
2
Tj=25℃,IS=1.25A,VGS=0V
-
-
1.2
V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2 copper pad of FR4 board ; 208℃/W when mounted on Min. copper pad.
± 8V
±100



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