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Datenblatt-Suchmaschine für elektronische Bauteile |
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2PB709AS Datenblatt(PDF) 3 Page - NXP Semiconductors |
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2PB709AS Datenblatt(HTML) 3 Page - NXP Semiconductors |
3 / 6 page ![]() 1999 Apr 23 3 NXP Semiconductors Product data sheet PNP general purpose transistor 2PB709A THERMAL CHARACTERISTICS Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. Note 1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 500 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = −45 V − −10 nA IE = 0; VCB = −45 V; Tj = 150 °C − −5 μA IEBO emitter cut-off current IC = 0; VEB = −5 V − −10 nA hFE DC current gain IC = −2 mA; VCE = −10 V 2PB709AQ 160 260 2PB709AR 210 340 2PB709AS 290 460 VCEsat collector-emitter saturation voltage IC = −100 mA; IB = −10 mA; note 1 − −500 mV Cc collector capacitance IE = ie = 0; VCB = −10 V; f = 1 MHz − 5 pF fT transition frequency IC = −1 mA; VCE = −10 V; f = 100 MHz 2PB709AQ 60 − MHz 2PB709AR 70 − MHz 2PB709AS 80 − MHz |
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