BAT120C datasheet(3/7 Pages) NXP

3 / 7 page

2003 Aug 04

NXP Semiconductors

Product data sheet

Schottky barrier double diodes

BAT120 series

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

ELECTRICAL CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

Note

Pulse test: tp = 300 μs; δ = 0.02.

THERMAL CHARACTERISTICS

Note

Refer to SOT223 standard mounting conditions.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Per diode

continuous reverse voltage

−

continuous forward current

−

IFSM

non-repetitive peak forward current

tp < 10 ms; half sinewave;

JEDEC method

−

IRSM

non-repetitive peak reverse current

tp = 100 μs

−

0.5

Tstg

storage temperature

−65

+150

°C

junction temperature

−

125

°C

Tamb

operating ambient temperature

−65

+125

°C

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

Per diode

forward voltage

see Fig.3

IF = 100 mA

260

300

IF = 1 A

400

450

reverse current

VR = 20 V; note 1; see Fig.4

500

μA

VR = 25 V; note 1; see Fig.4

−

VR = 20 V; Tj = 100 °C; note 1

−

diode capacitance

f = 1 MHz; VR = 4 V; see Fig.5

100

−

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

100

K/W

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