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ACST830-8GTR Datenblatt(PDF) 4 Page - STMicroelectronics

Teilenummer ACST830-8GTR
Bauteilbeschribung  Overvoltage protected AC switch
PDF  13 Pages
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

ACST830-8GTR Datenblatt(HTML) 4 Page - STMicroelectronics

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Characteristics
ACST8
4/13
Doc ID 7463 Rev 7
Figure 4.
On-state rms current versus
ambient temperature (free air
convection, fulle cycle)
Figure 5.
Relative variation of thermal
impedance versus pulse duration
I
(A)
T(RMS)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
25
50
75
100
125
α=180°
TO-220
D2PAK
Copper surface
= 1cm2
T
(°C)
amb
K=[Z /R ]
th
th
1.0E-02
1.0E-01
1.0E+00
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
1.0E+03
Z
th(j-a)
TO-220AB
TO-220FPAB
TO-220AB
TO-220FPAB
Z
th(j-c)
t (s)
p
Figure 6.
Relative variation of gate trigger
current (IGT) and voltage (VGT)
versus junction temperature
Figure 7.
Relative variation of holding
current (IH) and latching current (IL)
versus junction temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-50
-25
0
25
50
75
100
125
I
GT,VGT[Tj]/IGT,VGT[Tj=25 °C]
I
GT Q1-Q2
V
GT Q1-Q2-Q3
I
GT Q3
Tj(°C)
Typical values
0.0
0.5
1.0
1.5
2.0
2.5
-50
-25
0
25
50
75
100
125
I
H,IL [Tj]/IH,IL [Tj=25 °C]
I
H
I
L
Tj(°C)
Figure 8.
Surge peak on-state current versus
number of cycles
Figure 9.
Non repetitive surge peak on-state
current and corresponding value of
I2t versus sinusoidal pulse width
0
10
20
30
40
50
60
70
80
90
1
10
100
1000
I
TSM(A)
Non repetitive
T
j initial=25 °C
One cycle
t=20ms
Repetitive
T
C=105 °C
Number of cycles
1
10
100
1000
0.01
0.10
1.00
10.00
I
TSM(A), I²t (A²s)
T
j initial=25 °C
dI/dt limitation: 100 A/µs
I
TSM
I²t
tP(ms)
sinusoidal pulse
with width t < 10 ms
P



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