PDTC124T datasheet(2/14 Pages) NXP

2 / 14 page

2004 Aug 13

NXP Semiconductors

Product data sheet

NPN resistor-equipped transistors;

R1 = 22 k

Ω, R2 = open

PDTC124T series

FEATURES

• Built-in bias resistors

• Simplified circuit design

• Reduction of component count

• Reduced pick and place costs.

APPLICATIONS

• General purpose switching and amplification

• Inverter and interface circuits

• Circuit driver.

QUICK REFERENCE DATA

DESCRIPTION

NPN resistor-equipped transistor (see “Simplified outline,

symbol and pinning” for package details).

SYMBOL

PARAMETER

TYP.

MAX.

UNIT

VCEO

collector-emitter

voltage

−

output current (DC)

−

100

bias resistor

−

open

−

PRODUCT OVERVIEW

Note

* = p: Made in Hong Kong.

* = t: Made in Malaysia.

* = W: Made in China.

TYPE NUMBER

PACKAGE

MARKING CODE

PNP COMPLEMENT

PHILIPS

EIAJ

PDTC124TE

SOT416

SC-75

PDTA124TE

PDTC124TEF

SOT490

SC-89

PDTA124TEF

PDTC124TK

SOT346

SC-59

PDTA124TK

PDTC124TM

SOT883

SC-101

PDTA124TM

PDTC124TS

SOT54 (TO-92)

SC-43

TC124T

PDTA124TS

PDTC124TT

SOT23

−

*45(1)

PDTA124TT

PDTC124TU

SOT323

SC-70

*50(1)

PDTA124TU

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