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PESD2CAN Datenblatt(PDF) 2 Page - NXP Semiconductors |
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PESD2CAN Datenblatt(HTML) 2 Page - NXP Semiconductors |
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2 / 11 page ![]() PESD2CAN_1 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 01 — 22 December 2006 2 of 11 NXP Semiconductors PESD2CAN CAN bus ESD protection diode 2. Pinning information 3. Ordering information 4. Marking [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values [1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5. [2] Measured from pin 1 to 3 or 2 to 3. Table 2. Pinning Pin Description Simplified outline Symbol 1 cathode 1 2 cathode 2 3 common cathode 12 3 2 1 006aaa155 3 Table 3. Ordering information Type number Package Name Description Version PESD2CAN - plastic surface-mounted package; 3 leads SOT23 Table 4. Marking codes Type number Marking code[1] PESD2CAN 6R* Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per diode PPP peak pulse power tp = 8/20 µs [1][2] - 230 W IPP peak pulse current tp = 8/20 µs [1][2] -5 A Per device Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C |
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