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E50A2CS Datenblatt(PDF) 1 Page - KEC(Korea Electronics)

Teilenummer E50A2CS
Bauteilbeschribung  STACK SILICON DIFFUSED DIODE
PDF  2 Pages
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Hersteller  KEC [KEC(Korea Electronics)]
Direct Link  http://www.keccorp.com
Logo KEC - KEC(Korea Electronics)

E50A2CS Datenblatt(HTML) 1 Page - KEC(Korea Electronics)

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2010. 1. 28
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SEMICONDUCTOR
TECHNICAL DATA
E50A2CS, E50A2CR
STACK SILICON DIFFUSED DIODE
Revision No : 0
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
・Average Forward Current : I
O=50A.
・Repetitive Peak Reverse Voltage : V
RRM=200V.
POLARITY
E50A2CS (+ Type)
E50A2CR (- Type)
MAXIMUM RATING (Ta=25℃)
DIM
MILLIMETERS
A1
A2
A3
B1
D3
D2
B2
C1
C2
D1
2.0 0.3
1.9 0.3
8.5 0.3
E
10.0 0.3
13.5 0.3
24.0 0.5
10.0 0.3
5.0 0.3
2.5 0.3
5.0 0.3
4.5 0.3
9.0 0.3
1.0 0.3
4.4 0.5
0.6 0.3
DIM
MILLIMETERS
F
G
H
T
A3
A2
A1
D3
EF
G
MR
+_
+_
+_
+_
+_
+_
+_
+_
+_
+_
+_
+_
+_
+_
+_
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Peak Forward Voltage
VFM
IFM=100A
-
-
1.05
V
Repetitive Peak Reverse Current
IRRM
VRRM=200V
-
-
50
μA
Reverse Recovery Time
trr
IF=0.1A, IR=0.1A
-
-
15
μS
Temperature Resistance
Rth
DC total junction to case
-
-
1.0
℃/W
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak Reverse Voltage
VRRM
200
V
Average Forward Current
IF(AV)
50
A
Peak 1 Cycle Surge Current
IFSM
600 (50Hz)
A
Junction Temperature
Tj
-40～190
℃
Storage Temperature Range
Tstg
-40～150
℃


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