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MBR3045ST Datenblatt(PDF) 1 Page - ON Semiconductor

Teilenummer MBR3045ST
Bauteilbeschribung  SWITCHMODE??Power Rectifier
PDF  5 Pages
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Hersteller  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
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MBR3045ST Datenblatt(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2008
May, 2008 − Rev. 7
1
Publication Order Number:
MBR3045ST/D
MBR3045ST,
MBRB3045CT-1
SWITCHMODE™
Power Rectifier
Features and Benefits
• Dual Diode Construction — Terminals 1 and 3 May Be Connected
for Parallel Operation at Full Rating
• 45 V Blocking Voltage
• Low Forward Voltage Drop
• 175°C Operating Junction Temperature
• Pb−Free Packages are Available
Applications
• Power Supply − Output Rectification
• Power Management
• Instrumentation
Mechanical Characteristics
• Case: Epoxy, Molded
• Weight (Approximately): 1.9 Grams (TO−220AB)
1.5 Grams (TO−262)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes:
260
°C Max. for 10 Seconds
• Epoxy Meets UL 94 V−0 @ 0.125 in
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
45
V
Average Rectified Current
Per Device
(TC = 130°C)
Per Diode
IF(AV)
30
15
A
Peak Repetitive Forward Current, per Diode
(Square Wave, VR = 45 V, 20 kHz)
IFRM
30
A
Non−Repetitive Peak Surge Current (Surge
Applied at Rated Load Conditions,
Halfwave, Single Phase, 60 Hz)
IFSM
150
A
Peak Repetitive Reverse Current, per Diode
(2.0 ms, 1.0 kHz)
IRRM
2.0
A
Storage Temperature Range
Tstg
−65 to
+175
°C
Operating Junction Temperature (Note 1)
TJ
−65 to
+175
°C
Peak Surge Junction Temperature
(Forward Current Applied)
TJ(pk)
175
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dPD/dTJ < 1/RqJA.
http://onsemi.com
TO−220AB
CASE 221A
STYLE 6
3
4
1
SCHOTTKY BARRIER
RECTIFIER
30 AMPERES
45 VOLTS
3
1
2, 4
2
AYWW
B3045G
AKA
MARKING
DIAGRAMS
A
= Assembly Location
Y
= Year
WW
= Work Week
AKA
= Polarity Designator
G
= Pb−Free Device
I2PAK (TO−262)
CASE 418D
PLASTIC
AYWW
B3045CTG
AKA
3
4
1 2
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
ORDERING INFORMATION


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