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FS10AS-3 Datenblatt(PDF) 3 Page - Mitsubishi Electric Semiconductor

Teilenummer FS10AS-3
Bauteilbeschribung  HIGH-SPEED SWITCHING USE
PDF  4 Pages
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Hersteller  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

FS10AS-3 Datenblatt(HTML) 3 Page - Mitsubishi Electric Semiconductor

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Feb.1999
MITSUBISHI Nch POWER MOSFET
FS10AS-3
HIGH-SPEED SWITCHING USE
0
40
80
120
160
200
100
35 7
2
101
35 7
2
102
35 7
23
VGS = 10V
TC = 25°C
Pulse Test
20V
0
4
8
12
16
20
0
4
8
12
16
20
TC = 25°C
VDS = 10V
Pulse Test
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
GATE-SOURCE VOLTAGE VGS (V)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT ID (A)
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-SOURCE VOLTAGE VGS (V)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE VDS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
DRAIN CURRENT ID (A)
0
0.4
0.8
1.2
1.6
2.0
0
4
8
12
16
20
TC = 25°C
Pulse Test
5A
ID = 15A
10A
101
102
2
3
5
7
103
2
3
5
7
104
2
3
5
7
100
35 7
2
101
35 7
2
102
35 7
3
2
Tch = 25°C
f = 1MHZ
VGS = 0V
Ciss
Coss
Crss
100
101
23 4 5 7
102
23 4 5 7
101
102
2
3
4
5
7
103
2
3
4
5
7
Tch = 25°C
VDD = 80V
VGS = 10V
RGEN = RGS = 50
Ω
td(off)
td(on)
tf
tr
100
101
23 4 5 7
102
23 4 5 7
101
102
2
3
4
5
7
103
2
3
4
5
7
TC = 25°C
VDS = 10V
Pulse Test
75°C
125°C



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