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K4D26323RA Datenblatt(PDF) 3 Page - Samsung semiconductor

Teilenummer K4D26323RA
Bauteilbeschribung  1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL
PDF  18 Pages
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Hersteller  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K4D26323RA Datenblatt(HTML) 3 Page - Samsung semiconductor

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128M DDR SDRAM
K4D26323RA-GC
* VDD / VDDQ=2.8V *
- 3 -
Rev. 2.0 (Jan. 2003)
Revision 1.2 (September 13, 2001)
• Define DC spec value of K4D26323RA-GC33 and K4D263238A-GC2A
• Changed tCK(max) of -2A and -33 from 7ns to 5ns
Revision 1.1 (September 3, 2001)
• Added K4D26323RA-GC33(VDD/VDDQ=2.8V)
• Added K4D263238A-GC2A(350MHz)
Revision 1.0 (August 16, 2001)
• Changed tCDLR of K4D263238A-GC33 from 2tCK to 3tCK
• Removed VDDQ=1.8V from the spec.
• Added K4D263238A-GL as a low power part
• Defined DC spec.
Revision 0.1 (August 2, 2001) - Target Spec
• Changed tCK(max) of K4D263238A-GC45/-50/-55/-60 from 7ns to 10ns.
Revision 0.0 (June, 2001) - Target Spec
• Defined Target Specification



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