K4F661612C datasheet(3/35 Pages) SAMSUNG

3 / 35 page

CMOS DRAM

K4F661612C, K4F641612C

ABSOLUTE MAXIMUM RATINGS

* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to

the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended

periods may affect device reliability.

Parameter

Symbol

Rating

Units

Voltage on any pin relative to VSS

VIN,VOUT

-0.5 to +4.6

Voltage on VCC supply relative to VSS

VCC

-0.5 to +4.6

Storage Temperature

Tstg

-55 to +150

°C

Power Dissipation

Short Circuit Output Current

IOS Address

RECOMMENDED OPERATING CONDITIONS (Voltage referenced to Vss, TA= 0 to 70

°C)

*1 : Vcc+1.3V at pulse width

≤15ns which is measured at VCC

*2 : -1.3 at pulse width

≤15ns which is measured at VSS

Parameter

Symbol

Min

Typ

Max

Units

Supply Voltage

VCC

3.0

3.3

3.6

Ground

VSS

Input High Voltage

VIH

2.0

Vcc+0.3*1

Input Low Voltage

VIL

-0.3*2

0.8

DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted.)

Parameter

Symbol

Min

Max

Units

Input Leakage Current (Any input 0

≤VIN≤VCC+0.3V,

all other pins not under test=0 Volt)

II(L)

-5

Output Leakage Current

(Data out is disabled, 0V

≤VOUT≤VCC)

IO(L)

-5

Output High Voltage Level(IOH=-2mA)

VOH

2.4

Output Low Voltage Level(IOL=2mA)

VOL

0.4

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