2SC5420

Ordering number : EN5762

Inverter Lighting Applications

NPN Triple Diffused Planar Silicon Transistor

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN

O1397TS (KOTO) TA-1037 No.5762-1/4

Package Dimensions

unit: mm

2069B-SMP-FD

[2SC5420]

SANYO : SMP-FD

1 : Base

2 : Collector

3 : Emitter

10.2

2.55

2.55

1.3

4.5

1

2

3

1.2

0.8

0.4

Specifications

Parameter

Symbol

Conditions

Ratings

Unit

Collector-to-Base Voltage

VCBO

1000

V

Collector-to-Emitter Voltage

VCEO

450

V

Emitter-to-Base Voltage

VEBO

9V

Collector Current

IC

5A

Collector Current (Pulse)

ICP

10

A

Collector Dissipation

PC

1.75

W

Tc=25°C

50

W

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

–55 to +150

°C

Parameter

Symbol

Conditions

Ratings

min

typ

max

Unit

Collector Cutoff Current

ICBO

VCB=450V, IE=0

10

µA

Collector Cutoff Current

ICES

VCE=1000V, RBE=0

1.0

mA

Collector Sustain Voltage

VCEO(SUS)

IC=100mA, IB=0

450

V

Emitter Cutoff Current

IEBO

VEB=9V, IC=0

1.0

mA

C-E Saturation Voltage

VCE(sat)

IC=2.5A, IB=0.5A

1.0

V

B-E Saturation Voltage

VBE(sat)

IC=2.5A, IB=0.5A

1.5

V

DC Current Gain

hFE(1)

VCE=5V, IC=0.3A

30

40

50

hFE(2)

VCE=5V, IC=2.0A

10

Storage Time

tstg

IC=2.5A, IB1=0.5A, IB2=–1.0A

2.5

µs

Fall Time

tf

IC=2.5A, IB1=0.5A, IB2=–1.0A

0.15

µs

Features

• High breakdown voltage (VCBO=1000V).

• High reliability (Adoption of HVP process).

• Adoption of MBIT process.