2SJ459

No.5423-2/4

Specifications

Absolute Maximum Ratings at Ta=25

°C

Parameter

Symbol

Conditions

Ratings

Unit

Drain-to-Source Voltage

VDSS

--450

V

Gate-to-Source Voltage

VGSS

±30

V

Drain Current (DC)

ID

--4

A

Drain Current (Pulse)

IDP

PW

≤10µs, duty cycle≤1%

--16

A

Allowable Power Dissipation

PD

1.65

W

Tc=25

°C70

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Electrical Characteristics at Ta=25

°C

Ratings

Parameter

Symbol

Conditions

min

typ

max

Unit

Drain-to-Source Breakdown Voltage

V(BR)DSS

ID=--10mA, VGS=0

--450

V

Zero-Gate Voltage Drain Current

IDSS

VDS=--360V, VGS=0

--1.0

mA

Gate-to-Sourse Leakage Current

IGSS

VGS=±30V, VDS=0

±100

nA

Cutoff Voltage

VGS(off)

VDS=--10V, ID=--1mA

--2.0

--3.0

V

Forward Transfer Admittance

yfs

VDS=--10V, ID=--2A

1.2

2.4

S

Static Drain-to-Source On-State Resistance

RDS(on)

ID=--2A, VGS=--10V

2.0

2.8

Ω

Input Capacitance

Ciss

VDS=--20V, f=1MHz

1500

pF

Output Capacitance

Coss

VDS=--20V, f=1MHz

230

pF

Reverse Transfer Capacitance

Crss

VDS=--20V, f=1MHz

80

pF

Turn-ON Delay Time

td(on)

See specified Test Circuit.

35

ns

Rise Time

tr

See specified Test Circuit.

50

ns

Turn-OFF Delay Time

td(off)

See specified Test Circuit.

300

ns

Fall Time

tf

See specified Test Circuit.

80

ns

Diode Forward Voltage

VSD

IS=--4A, VGS=0

-

-1.5

V

Diode Reverse Recovery Time

trr

IS=--4A, di / dt=100A / µs

150

195

ns

Marking : J459

*(Note) Care must be taken in handling the 2SJ459 because no protection diode is provided between gate and source.

Switching Time Test Circuit

PW=10

µs

D.C.

≤1%

0V

--10V

VIN

P.G

50

Ω

G

S

ID= --2A

RL=100Ω

VDD= --200V

VOUT

2SJ459

VIN

D