RMB2S datasheet(2/2 Pages) EIC

Teilenummer	RMB2S

Bauteilbeschribung	Miniature Glass Passivated Fast Recovery Surface Mount Bridge Rectifier

PDF	2 Pages

Scroll/Zoom	100%

Hersteller	EIC [EIC discrete Semiconductors]

Direct Link	http://www.eicsemi.com

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RATING AND CHARACTERISTIC CURVES ( RMB2S - RMB4S )

FIG.1 - DERATING CURVE FOR OUTPUT

FIG.2 - MAXIMUM NON-REPETITIVE PEAK

RECTIFIED CURRENT

FORWARD SURGE CURRENT

PER BRIDGE ELEMENT

100

125

150

175

100

AMBIENT TEMPERATURE, (°C)

NUMBER OF CYCLES AT 60Hz

FIG.3 - TYPICAL FORWARD CHARACTERISTICS

FIG.4 - TYPICAL REVERSE CHARACTERISTICS

PER BRIDGE ELEMENT

Page 2 of 2

Rev. 02 : March 24, 2005

0.8

0.6

0.4

0.2

1.0

0.1

0.01

0.1

100

140

120

PERCENT OF RATED PEAK

REVERSE VOLTAGE, (%)

TJ = 25°C

TJ = 125°C

0.01

100

Pulse Width = 300

µs

1% Duty Cycle

TJ = 25°C

Single Half Sine-Wave

(JEDEC Method)

Ta = 40°C

Resistive or Inductive Load

FORWARD VOLTAGE, VOLTS

0.4

0.5

0.6

0.7 0.8

0.9

1.0

1.1

Aluminum Substrate

Glass Epoxy

P.C.B.

1.2

1.3

1.4

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