Electrical characteristics

STx7NK30Z

4/15

Table 7.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Turn-on delay time

Rise time

Turn-off-delay time

Fall time

Figure 15

11

25

20

10

ns

ns

ns

ns

Off-voltage rise time

Fall time

Cross-over time

Figure 15

8.5

8.5

20

ns

ns

ns

Table 8.

Source Drain Diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

(1)

1.

Pulse width limited by safe operating area.

Source-drain current

Source-drain current

(pulsed)

5

20

A

A

(2)

2.

Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.

Forward On voltage

1.6

V

Reverse recovery time

Reverse recovery charge

Reverse recovery current

Figure 20

154

716

9.3

ns

nC

A

Table 9.

Gate-source Zener diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

(1)

1.

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s

ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be

applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and

cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the

usage of external components

Gate-source breakdown

voltage

Igs=± 1mA (open drain)

30

V