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STP40NF10 Datenblatt(PDF) 3 Page - STMicroelectronics

Teilenummer STP40NF10
Bauteilbeschribung  N-channel 100V - 0.025Ω - 50A TO-220 / DPAK Low gate charge STripFET??II Power MOSFET
PDF  15 Pages
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP40NF10 Datenblatt(HTML) 3 Page - STMicroelectronics

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STP40NF10 - STD40NF10
Electrical ratings
3/15
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220
DPAK
VDS
Drain-source voltage (vgs = 0)
100
V
VGS
Gate- source voltage
±20
V
ID
(1)
1.
Limited by wire bonding
Drain current (continuous) at TC = 25°C
50
A
ID
Drain current (continuous) at TC = 100°C
35
A
IDM
(2)
2.
Pulse width limited by safe operating area
Drain current (pulsed)
200
A
PTOT
Total dissipation at TC = 25°C
150
125
W
Derating factor
1
0.83
W/°C
dv/dt(3)
3.
ISD ≤50A, di/dt ≤600A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX.
Peak diode recovery voltage slope
27
V/ns
EAS
(4)
4.
Starting Tj= 25°C, ID= 50A, VDD=25V
Single pulse avalanche energy
385
mj
Tstg
Storage temperature
– 55 to 175
°C
Tj
Max. operating junction temperature
Table 3.
Thermal data
Symbol
Parameter
Value
Unit
TO-220
DPAK
Rthj-case Thermal resistance junction-case Max
1
1.2
°C/W
Rthj-a
Thermal resistance junction-ambient Max
62.5
°C/W
Tl
Maximum lead temperature for soldering
purpose
300
°C



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