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STB25NM50N Datenblatt(PDF) 5 Page - STMicroelectronics

Teilenummer STB25NM50N
Bauteilbeschribung  N-channel 500 V, 0.11 Ω, 22 A MDmesh??II Power MOSFET TO-220, TO-220FP, I2PAK, D2PAK, TO-247
PDF  18 Pages
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB25NM50N Datenblatt(HTML) 5 Page - STMicroelectronics

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STx25NM50N
Electrical characteristics
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Table 7.
Switching times
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 250 V, ID = 11 A
RG =4.7 Ω VGS = 10 V
(see Figure 18)
23
23
75
22
ns
ns
ns
ns
Table 8.
Source drain diode
Symbol
Parameter
Test conditions
Min Typ. Max Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
22
88
A
A
VSD
(2)
2.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage
ISD = 22 A, VGS = 0
1.3
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 22 A, di/dt = 100 A/µs
VDD = 100 V
(see Figure 23)
460
6.9
30
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 22 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see Figure 23)
532
8.25
31
ns
µC
A



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