PD55008STR-E datasheet(7/25 Pages) STMICROELECTRONICS

Teilenummer	PD55008STR-E

Bauteilbeschribung	RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

PDF	25 Pages

Scroll/Zoom	100%

Hersteller	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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7 / 25 page

PD55008-E, PD55008S-E

Typical performance

Doc ID 12259 Rev 2

7/25

4.1

PD55008-E

Figure 6.

Output power vs. input power

Figure 7.

Power gain vs. output power

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

Pin, INPUT POWER (W)

VDD = 12.5 V

IDQ = 150 mA

480 MHz

500 MHz

520 MHz

Pout, OUTPUT POWER (W)

VDD = 12.5 V

IDQ = 150 mA

480 MHz

500 MHz

520 MHz

Figure 8.

Drain efficiency vs. output power

Figure 9.

Input return loss vs. output power

Pout, OUTPUT POWER (W)

VDD = 12.5 V

IDQ = 150 mA

480 MHz

500 MHz

520 MHz

Pout, OUTPUT POWER (W)

-40

-30

-20

-10

VDD = 12.5 V

IDQ = 150 mA

480 MHz

500 MHz

520 MHz

Figure 10.

Output power vs. bias current

Figure 11.

Drain efficiency vs. bias current

100

200

300

400

500

600

700

800

IDQ, BIAS CURRENT (mA)

VDD = 12.5 V

Pin= 21.7 dBm

480 MHz

500 MHz

520 MHz

100

200

300

400

500

600

700

800

IDQ, BIAS CURRENT (mA)

VDD = 12.5 V

Pin= 21.7 dBm

480 MHz

500 MHz

520 MHz

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