PD55003STR-E datasheet(8/29 Pages) STMICROELECTRONICS

Teilenummer	PD55003STR-E

Bauteilbeschribung	RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

PDF	29 Pages

Scroll/Zoom	100%

Hersteller	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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8 / 29 page

Typical performance

PD55003-E, PD55003S-E

8/29

Doc ID 12273 Rev 3

Figure 10.

Power gain vs output power

Figure 11.

Return loss vs output power

Pout, OUTPUT POWER (W)

Vdd = 12.5 V

Idq = 50 mA

Tune for Po=3 W

520 MHz

500 MHz

480 MHz

345

Pout, OUTPUT POWER (W)

-40

-30

-20

-10

Vdd = 12.5 V

Idq = 50 mA

Tune for Po=3 W

520 MHz

500 MHz

480 MHz

Figure 12.

Output power vs bias current

Figure 13.

Drain efficiency vs bias current

100

200

300

400

500

600

IDQ, BIAS CURRENT (mA)

2.6

2.8

3.2

3.4

3.6

3.8

Vdd = 12.5 V

Pin=17.9 dBm

Tune for Po=3 W

520 MHz

500 MHz

480 MHz

100

200

300

400

500

600

IDQ, BIAS CURRENT (mA)

Vdd = 12.5 V

Pin=17.9 dBm

Tune for Po=3 W

520 MHz

500 MHz

480 MHz

Figure 14.

Output power vs supply voltage

Table 8.

Drain efficiency vs supply voltage

VDD, SUPPLY VOLTAGE (V)

1.5

2.5

3.5

Idq = 50 mA

Pin=17.9 dBm

Tune for Po=3 W

520 MHz

500 MHz

480 MHz

VDD, SUPPLY VOLTAGE (V)

Idq = 50 mA

Pin=17.9 dBm

Tune for Po=3 W

520 MHz

500 MHz

480 MHz

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